transistor (npn) features z large collector power dissipation p c z low collector-emitter saturation voltage v ce(sat) z complementary to 2sb766a maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 1 a p c collector power dissipation 0.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =10 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =2ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =10 a,i c =0 5 v collector cut-off current i cbo v cb =20v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,i c =0 0.1 a h fe(1) v ce =10v,i c =500ma 85 340 dc current gain h fe(2) v ce =5v,i c =1a 50 collector-emitter saturation voltage v ce(sat) i c =500ma,i b =50ma 0.4 v base-emitter saturation voltage v be(sat) i c =500ma,i b =50ma 1.2 v transition frequency f t v ce =10v,i c =50ma,f=200mhz 200 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 20 pf classification of h fe(1) rank q r s range 85-170 120-240 170-340 marking yq yr ys sot-89 1. base 2. collector 3. emitter 1 2 3 2SD874A 1 www.htsemi.com semiconductor jinyu
2SD874A 2 www.htsemi.com semiconductor jinyu
|
